BY SOKRATES T. PANTELIDES
IBM Research Division
Thomas J. Watson Research Center
Yorktown Heights, N.Y.
" As devices shrink below the micron regime, a very different and interesting world is unveiled. In a recent paper, the resistance of submicron junctions is shown to behave nonlinearly with current injection.
H.J. Queisser, R. Trzcinski, “Nonlinear unipolar charge transport in silicon microcontacts,’ PhysicalReview Letters, 62, 2721-3, 5 June 1989. (Max-Planck-Institut für Festkõrperforschung, Stuttgart, F.R.G.)
" A true dynamical calculation at finite temperatures of an impurity diffusing in a crystal is now possible with full quantum mechanical treatment of the electronic system. No phenomenology here! Just sit back and watch a hydrogen atom run around in silicon.
F. Buda, G.L. Chiarotti, R. Car, M. Parrinello, “Proton diffusion in crystalline silicon ,“Physical Review Letters, 63, 294-7, 17 July 1989. (International School for Advanced Studies, Trieste, Italy)
" Modulation doping...