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PHYSICS BY SOKRATES T. PANTELIDES IBM Research Division Thomas J. Watson Research Center Yorktown Heights, N.Y. " As devices shrink below the micron regime, a very different and interesting world is unveiled. In a recent paper, the resistance of submicron junctions is shown to behave nonlinearly with current injection. H.J. Queisser, R. Trzcinski, “Nonlinear unipolar charge transport in silicon microcontacts,’ PhysicalReview Letters, 62, 2721-3, 5 June 1989. (Max-Planck-Institut

Sokrates Pantelides
Sep 17, 1989

PHYSICS

BY SOKRATES T. PANTELIDES
IBM Research Division
Thomas J. Watson Research Center
Yorktown Heights, N.Y.


" As devices shrink below the micron regime, a very different and interesting world is unveiled. In a recent paper, the resistance of submicron junctions is shown to behave nonlinearly with current injection.

H.J. Queisser, R. Trzcinski, “Nonlinear unipolar charge transport in silicon microcontacts,’ PhysicalReview Letters, 62, 2721-3, 5 June 1989. (Max-Planck-Institut für Festkõrperforschung, Stuttgart, F.R.G.)

" A true dynamical calculation at finite temperatures of an impurity diffusing in a crystal is now possible with full quantum mechanical treatment of the electronic system. No phenomenology here! Just sit back and watch a hydrogen atom run around in silicon.

F. Buda, G.L. Chiarotti, R. Car, M. Parrinello, “Proton diffusion in crystalline silicon ,“Physical Review Letters, 63, 294-7, 17 July 1989. (International School for Advanced Studies, Trieste, Italy)

" Modulation doping...

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