Letters, 59:811, 1991.
E.A. Fitzgerald, Y.-H. Xie, M.L. Green, D. Brasen, A.R. Kortan, et al., "Totally relaxed GeSi layers with low threading dislocation densities grown on Si substrates," Applied Physics Letters, 59:811, 1991.
Eugene Fitzgerald (AT&T Bell Laboratories, Murray Hill, N.J.): "Nearly all the microelectronic circuitry (very-large-scale integration [VLSI]) today is manufactured from silicon. For decades, scientists have been trying to estimate when Si would mature and another materials system would dominate. However, Si circuitry continues to improve by reducing the device size--that is, faster circuits are produced by making smaller Si transistors so that electrons travel shorter distances. Thus, it now appears that Si VLSI will still dominate, although certain bottlenecks will appear. For instance, when the Si devices shrink below 0.1 micron in size, the metal interconnections among transistors, circuits, and assemblies may become the bottleneck. Because Si will still be an important material for much of the ...
