J.-C. Vial, A. Bsiesy, F. Gaspard, R. Herino, M. Ligeon, F. Muller, R. Romestain, R.M. Macfarlane, "Mechanisms of visible- light emission from electro-oxidized porous silicon," Physical Review B, 45:14171-6, 1992.
Jean-Claude Vial (Laboratoire de Spectromtrie Physique, Universit Joseph Fourier de Grenoble, Saint Martin d'Hres, France): "A great deal of research has recently been devoted to understanding the efficient visible-light emission from porous silicon. Initially it was supposed that confinement of carriers inside nanometric crystallities was sufficient to break the selection rules of bulk silicon and to give a direct band gap nature to the optical transition. The interest in this paper rose from the fact that it showed that, rather, the high efficiency of the luminescence is mainly due to the reduction of nonradiative processes. Time-resolved photoluminescence technique has been extensively used to show that nonradiative rates are long and have an interesting dependence on confinement energy. An analysis of ...
